Abstract:A heterogeneous gate insulator (GI) that can achieve high reliability while expressing the high‐mobility (>50 cm2 Vs−1) characteristics of indium‐rich atomic layer depostion (ALD)‐based indium‐gallium‐zinc oxide (IGZO) is developed through an in situ ALD process. A net zero strategy is proposed that independently controls the donor and trap within the GI, achieving the high‐stability of positive‐bias‐temperature‐stability (∆Vth = −0.02 V) and constant‐current‐stability (∆ID = 0.49%). The reliability of oxide‐semiconductor (OS) thin‐film transistors (TFTs) is significantly influenced by the gate insulator (GI). During electrical bias stress, the defect sites near the semiconductor/GI interface and/or within the GI may trap electrons, which makes the threshold voltage (Vth) shift toward positive values. On the other hand, carbon (C) or hydrogen (H) atoms may diffuse from the GI into the active layer, and act as shallow donors, which induce negative Vth shifts (ΔVth). In this paper, an in situ atomic layer deposition (ALD)‐based GI heterostructure is introduced, which consists of a stack of two complementary materials, namely Al2O3 and SiO2. Here, a competition occurs between electron trapping in Al2O3 (positive ΔVth) and carrier generation from H atoms in SiO2 (negative ΔVth) which allows the achievement of nearly zero ΔVth under positive bias temperature stress (PBTS). This strategy is successfully applied to a high‐mobility (>50 cm2 Vs−1) ALD‐based indium‐gallium‐zinc oxide (IGZO) device, resulting in a net ∆Vth of −0.02 V under PBTS and drain current variation (∆ID) of +0.49% under constant current stress (CCS). The application of an in situ ALD process thus offers valuable insights to resolve the mobility versus reliability trade‐off in high‐performance oxide TFTs.

Mobility–stability trade-off in oxide thin-film transistors

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Hybrid Organic-Metal Oxide Multilayer Channel Transistors with Record Operational Stability

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

Improvement of Mobility and Stability in Oxide Thin-Film Transistors Using Triple-Stacked Structure

Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors

35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

High stability mechanisms of quinary indium gallium zinc aluminum oxide multicomponent oxide films and thin film transistors

1‐1: Oxide Semiconductor Thin‐Film Transistors with High Mobility and Stability

Thermopower Modulation Analyses of High-Mobility Transparent Amorphous Oxide Semiconductor Thin-Film Transistors

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors

Review — Extremely Thin Amorphous Indium Oxide Transistors

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

High mobility and hysteresis free InGaSnO thin film transistors by co-sputtering via low temperature post annealing process

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.