High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

Xin Cao,Iain Thayne,S. Thoms,M. Holland,C.R. Stanley

2003-01-01

Abstract:We report the performance of 50 nm gate length metamorphic GaAs HEMTs with maximum transconductance(gm ) of 1200 mS/mm and current cut-off frequency(fT ) of 300 GHz. The devices were fabricated with a novel UVIII/PMMA T-gate resist stack and a non-selective “digital” wet etch gate recess technology which results in a highly uniform, high yield sub-100 nm HEMT technology.