Abstract:Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two variations of one such device design, incorporating a composite-channel structure comprised of InAs clad by InP-lattice-matched InGaAs. The only difference between these two variations is the thickness of the bottom InGaAs cladding layer. The thicker gave extremely high performance, with current-gain-cutoff frequency (f(T)) exceeding 500 GHz, enabled by room-temperature channel-electron Hall mobility (mu(e)) as high as 15,400 cm(2)/V/s and dc transconductance (g(m)) exceeding 2700 mS/mm; but it also incurred significant impact ionization. The thinner incurred less of this short-channel effect and yet gave very high performance, with f(T) exceeding 440 GHz, enabled by mu(e) as high as 14,800 cm(2)/V/s and g(m) exceeding 2200 mS/mm, initially indicating that such a tradeoff might be the more overall beneficial. However, from a subsequent process iteration, in which the gate-recess etch was deepened for reduced short-channel effects, both of these same composite-channel design variations gave even better performance results. In that process iteration, the thicker variation not only achieved f(T) exceeding 500 GHz, but also achieved the recently-published new record maximum frequency of oscillation (f(MAX)) exceeding 1 THz. Therefore, the thicker bottom InGaAs cladding layer has indeed proven to be the more optimal composite-channel design variation for performance beyond 300 GHz.

Fabrication of InP HEMT Devices with Extremely High Fmax

Sub 50 Nm Inphemt Device With Fmax Greater Than 1 Thz

100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz

High Gain G-Band Mmic Amplifiers Based On Sub-50 Nm Gate Length Inp Hemt

35Nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications

Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

High performance 50nm T-gate In(0.52)A1(0.48)As/In0.53Ga0.47As metamorphic high electron mobility transistors

Sub-50NM InGaAs/InAlAs/InP HEMT for sub-millimeter wave power amplifier applications

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

Millimetre-wave Performance of InAlAs/InGaAs HEMTs Using a UVIII/PMMA Bilayer for 70nm T-Gate Fabrication

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstrating FT/Fmax of 350/532 GHz

Inas/Ingaas Composite-Channel Hemt On Inp: Tailoring Ingaas Thickness For Performance

Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of F(t) Based on the Small Signal Equivalent Circuit

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Optimized recess etching criteria for T‐gate fabrication achieving ft= 290 GHz at Lg= 124 nm in metamorphic HEMT with In0.7Ga0.3As channel

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

MMIC Class-F Power Amplifiers Using Field-Plated AlGaN/GaN HEMTs