Abstract:Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on β-gallium oxide (β-Ga 2 O 3 ) wafers with various back barrier (BB) materials have garnered considerable attention, mainly due to the superior sheet charge density achieved by the confinement of a large number of electrons in the quantum well, which improves RF performance even further. This work investigates the role of different BB materials of Fe-doped AlGaN buffer AlN/GaN HEMTs on β-Ga 2 O 3 wafers (substrate) with gate–source ( L GS ) and gate–drain ( L GD ) distances of 0.4 μm and 1.2 μm, respectively. When compared to traditional substrates such as silicon carbide and silicon, a β-Ga 2 O 3 substrate is more affordable, is accessible in large wafer sizes, and has a lower lattice mismatch (0.4–2.4%) with AlGaN alloys. The effects of gate length scaling (Lg = 50 nm, 100 nm, and 150 nm) on the proposed HEMT devices were also analysed. The short-channel effects can be mitigated by introducing BB structures, which helps avoid further scaling of the barrier layer. With a p-diamond BB of 100 nm thickness, an Fe-doped AlGaN buffer rectangular gated AlN/GaN HEMT Lg = 50 nm results in maximum I D of 5.23 A/mm, g m of 1723 mS/mm, and f T of 361.6 GHz. This superior DC/RF performance can be achieved due to the large confinement of charge carriers into the quantum well and the low leakage current achieved by introducing BB structures and Fe-doped AlGaN buffer. With this outstanding performance, the proposed HEMT device is a promising candidate for next-generation RF applications.

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Nitride Spacer Aided 0.15 Μm AlGaN/GaN HEMT Fabrication with Optimized Gate Patterning Process

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

Fabrication of 150-Nm Al 0.48 in 0.52 As/Ga 0.47 in 0.53 As Mhemts on GaAs Substrates

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

Growth and Characterization of 0.8-Μm Gate Length AlGaN/GaN HEMTs on Sapphire Substrates

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Fabrication of 80-Nm T-gate High Indium In0.7Ga0.3As/In0.6Ga0.4As Composite Channels Mhemt on GaAs Substrate with Simple Technological Process

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier