Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

First Demonstration of a Self-Aligned P-Channel GaN Back Gate Injection Transistor

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs with $f_{t}$ of 275 GHz

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

Demonstration of a Lateral P-Nio/n-gan JFET Fabricated by Selective-Area Regrowth

First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

Self-assembled monolayer gate doping and their detail deep cryogenic characterization of GaN/Si HEMTs

Demonstration of AlGaN/GaN HEMTs on Vicinal Sapphire Substrates with Large Misoriented Angles

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer As Recess Mask

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance

SiGe HBT Device in Mixed Dry Wet Etching

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration