Abstract:Epitaxial regrowth processes for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts are reported. The combination of low‐leakage, large positive threshold p‐gates, and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors. Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al0.85Ga0.15N barrier/Al0.50Ga0.50N channel HEMT with a large positive threshold voltage (VTH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10−6 Ω cm2, average = 1.8 × 10−4 Ω cm2) are demonstrated in an Al0.85Ga0.15N barrier/Al0.68Ga0.32N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs with $f_{t}$ of 275 GHz

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs with Record Extrinsic Transconductance of 1105 Ms/mm

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

N-polar GaN Epitaxy and High Electron Mobility Transistors

Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $F_{\max}$

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

First Demonstration of an N-Polar InAlGaN/GaN HEMT

Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz

Nitride Spacer Aided 0.15 Μm AlGaN/GaN HEMT Fabrication with Optimized Gate Patterning Process

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE