Abstract:This comprehensive review delves into the intricate realm of GaN-based metal–oxide–semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive analysis of their contemporary DC and radio-frequency (RF) performance. Despite familiar challenges in the instability of threshold voltage ( V TH ) observed in GaN MOSHEMTs, recent innovations in interface technologies, incorporating in situ SiN x and surface oxidation of (Al)GaN, have led to exceptional DC and dynamic performances, achieving stability in V TH by reducing surface states, minimizing interface traps, controlling surface potential, and enhancing interface quality. Adoption of high-κ dielectric materials is emphasized since they are indispensable, as they play a crucial role in improving the electrostatic control of the gate and reducing parasitic capacitance, and contribute to achieving low gate leakage, high gm, small V TH fluctuation, and small current collapse. The recent aspects of the AlGaN/GaN MOSHEMT devices are presented, and the impacts of structural breakthroughs are discussed. When compared to single-layer arrangements, the utilization of multilayer gate stacks can provide improved gate control and less leakage. Tailoring the electric field distribution and enhancing device performance for particular applications or operational conditions are made possible by engineering the gate stack arrangement. This review also discusses fabrication challenges and reliability issues in GaN-based MOSHEMTs, highlighting innovative manufacturing techniques and shedding light on ongoing research to address these challenges. By presenting a comprehensive overview of recent developments and emerging trends, this review aims to contribute valuable insights for researchers and practitioners in the dynamic and expanding field of GaN-based RF power electronics and sensing technologies.

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Fabrication of 45 Nm High in Component Metamorphic In(0.7)Ga0.3as/In0.6ga(0.4)As Composite-Channel High Electron-Mobility Transistors on Gaas Substrates

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Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

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Self-Aligned N-Polar GaN/InAlN MIS-HEMTs with Record Extrinsic Transconductance of 1105 Ms/mm

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DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator