Abstract:Novel Al 2 O 3 -dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al 2 O 3 /TiO 2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The r-gate includes a 1-μm long active gate on the Al 2 O 3 dielectric and a 1-μm long field-plate on the composite Al 2 O 3 /TiO 2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (I on /I off ) of 8.2 x 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (g m,max ) of 210.1 mS/mm, maximum drain-source saturation current density (I DS,max ) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at V GS = -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO 2 -dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Characteristics of Submicron-Footprint TiO2 Based AlGaN/GaN MOSHEMT on SiC Substrate

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Al2O3-Dielectric InAlN/AlN/GaN ${\gamma}$ -Gate MOS-HFETs with Composite Al2O3/TiO2 Passivation Oxides

Enhanced Performances of AlGaN/GaN HEMTs with Dielectric Engineering of HfZrOx

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaOx As Gate Dielectric

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

High-temperature operation of Al2O3/Ga2O3 bi-layer gate stack GaN MOS-HEMT up to 450 °C with suppressed gate leakage

Simulation and analysis of high breakdown voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 gate dielectric

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Al<sub>2</sub>O<sub>3</sub>-Dielectric InAlN/AlN/GaN <inline-formula> <tex-math notation="LaTeX">${\Gamma}$ </tex-math></inline-formula>-Gate MOS-HFETs With Composite Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> Passivation Oxides

High-Performance HZO/InAlN/GaN MIS-HEMT with fT/fmax of 155/250 GHz

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit