Abstract:Novel Al 2 O 3 -dielectric InAlN/AlN/GaN Γ-Gate metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with composite Al 2 O 3 /TiO 2 passivation oxides formed by using ultrasonic spray pyrolysis deposition/RF sputtering, respectively, are investigated. The r-gate includes a 1-μm long active gate on the Al 2 O 3 dielectric and a 1-μm long field-plate on the composite Al 2 O 3 /TiO 2 oxides. The present Γ-Gate MOS-HFET has demonstrated excellent on/off current ratio (I on /I off ) of 8.2 x 1010, subthreshold swing of 102.3 mV/dec, maximum extrinsic transconductance of (g m,max ) of 210.1 mS/mm, maximum drain-source saturation current density (I DS,max ) of 868.3 mA/mm, two-terminal off-state gate-drain breakdown voltage (BVGD) of -311.2 V, three-terminal drain-source breakdown voltage (BVDS) of 237 V at V GS = -10 V, and power-added efficiency of 39.9% at 2.4 GHz. A conventional Schottky-gate HFET and TiO 2 -dielectric MOS-HFET were also prepared in comparison. The present design has shown superior dc/RF device performance. It is suitable for high-power RF circuit applications.

Al2O3-Dielectric InAlN/AlN/GaN ${\gamma}$ -Gate MOS-HFETs with Composite Al2O3/TiO2 Passivation Oxides

Al<sub>2</sub>O<sub>3</sub>-Dielectric InAlN/AlN/GaN <inline-formula> <tex-math notation="LaTeX">${\Gamma}$ </tex-math></inline-formula>-Gate MOS-HFETs With Composite Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> Passivation Oxides

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Improved Ultraviolet Detection and Device Performance of Al 2 O 3 -Dielectric in 0.17 Al 0.83 N/AlN/GaN MOS-HFETs

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Comparative Study on Graded-Barrier AlxGa1-xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Improved Ultraviolet Detection and Device Performance of Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.17</sub>Al<sub>0.83</sub>N/AlN/GaN MOS-HFETs

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Characteristics of Submicron-Footprint TiO2 Based AlGaN/GaN MOSHEMT on SiC Substrate

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors