Abstract:Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al2O3/GaN MOSFETs (metal–oxide–semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility (μ FEmax) of sapphire substrate device (176 cm2/V⋅s) is 1.83 times that of silicon substrate device (96 cm2/V⋅s). The conductive resistance of silicon substrate device is 21.2Ω ⋅mm, while that of sapphire substrate device is only 15.2Ω ⋅mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al2O3/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al2O3 dielectric near Al2O3/GaN and the interface traps in Al2O3/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.

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Improved Ultraviolet Detection and Device Performance of Al<sub>2</sub>O<sub>3</sub>-Dielectric In<sub>0.17</sub>Al<sub>0.83</sub>N/AlN/GaN MOS-HFETs

Improved Ultraviolet Detection and Device Performance of Al 2 O 3 -Dielectric in 0.17 Al 0.83 N/AlN/GaN MOS-HFETs

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics

Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Comparative Study on Graded-Barrier AlxGa1-xN/AlN/GaN/Si Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor by Using Ultrasonic Spray Pyrolysis Deposition Technique

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ As Gate Dielectric

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Characteristics of Submicron-Footprint TiO2 Based AlGaN/GaN MOSHEMT on SiC Substrate

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Al 2 O 3 -Dielectric InAlN/AlN/GaN ${\Gamma}$ -Gate MOS-HFETs With Composite Al 2 O 3 /TiO 2 Passivation Oxides

5.3A/400V Normally-off AlGaN/GaN-on-Si MOS-HEMT with High Threshold Voltage and Large Gate Swing

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited <formula formulatype="inline"><tex>$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> as Gate Dielectric

O-3-Sourced Atomic Layer Deposition of High Quality Al2o3 Gate Dielectric for Normally-Off Gan Metal-Insulator-Semiconductor High-Electron-Mobility Transistors

Improved High-Temperature Device Transport Properties and Off-State Characteristics of Algan/Gan Power Devices with Atomic Layer Deposition (ald) Hfalo High-K Dielectric

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric