Abstract:Conventional silicon (Si)-based power devices face physical limitations-such as switching speed and energy efficiency-which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties-such as low ON-resistance and fast switching-and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems-for example, large lattice and thermal mismatches, as well as 'melt-back etching' at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

GaN HEMTs on Low Resistivity Si Substrates with Thick Buffer Layers for RF Signal Amplification and Power Conversion

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Improving Rf Characteristic and Suppress Gate Leakage in Normally-Off Gan-Hemts Using Negative Polarization Effect and Floating Gate for Millimeter-Wave Systems

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Recent Advances in GaN‐Based Power HEMT Devices

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

High Performance $0.25\mu\mathrm{m}$ GaN Technology with Low Memory Effects

GaN-based Power High-Electron-mobility Transistors on Si Substrates: from Materials to Devices