Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

A Novel Si-rich SiN Bilayer Passivation with Thin-Barrier AlGaN/GaN HEMTs for High Performance Millimeter-Wave Applications

Temperature-Dependent Current Collapse and Gate Leakage in AlGaN/GaN HEMTs With Si-rich SiN Interlayer

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

Improving Electrical Transport Properties of AlGaN/GaN Heterostructure Using AlSiN Passivation

Reduced Reverse Gate Leakage Current for GaN HEMTs with 3 Nm Al/40 Nm SiN Passivation Layer

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiNx Passivation

Mechanism of Linearity Improvement in GaN HEMTs by Low Pressure Chemical Vapor Deposition-SiN x Passivation

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Study of Surface Passivation with Different a-SiNBxB:H Films Effect on AlGaN/GaN HEMTs

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Gate-Recessed Normally-OFF GaN MOSHEMT with Improved Channel Mobility and Dynamic Performance Using AlN/Si 3 N 4 As Passivation and Post Gate-Recess Channel Protection Layers

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

Improved Gate Reliability of Normally off P-Gan Gate HEMTs with in Situ SiN Cap-Layer

Mechanism study of the surface passivation effect on current collapse characteristics of AlGaN/GaN HEMTs