Abstract:In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal-organic chemical vapor deposition (MOCVD) was investigated by utilizing the both AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. Atomic force microscope (AFM) and high-resolution x-ray diffractometer (HR-XRD) confirm low surface roughness of 0.26 – 0.34 nm and the formation of high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit high electron mobility of up to 1700 cm2/V∙s and high carrier concentration density of (1.02 – 1.06 × 1013 cm-2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate low specific contact resistivity (c) of 2.7 × 10-6 Ω·cm2 and low contact resistance (RC) of 0.3 Ω·mm for the heterostructure with BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 μm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA/cm2), compared to the heterostructure without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, improvement of 10.6% in maximum saturation current (IDS) and 15.2% in on-resistance (RON)has been for the device fabricated on Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to –1.40 dB/mm at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

High Performance AlGaN/GaN Hemts on GaN Substrates

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

The Influence of 1nm AlN Interlayer on Properties of the Al0.3Ga0.7N/AlN/GaN HEMT Structure

Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

The effect of AlN growth time on the electrical properties of Al 0.38Ga0.62N/AlN/GaN HEMT structures

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs