Abstract:This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by employing various passivation materials with different dielectric constants and passivation structures. To ensure the simulation reliability, the parameters were calibrated based on the measured data from the fabricated basic Si3N4 passivation structure of the HEMT. The Si3N4 passivation material was replaced with high-k materials, such as Al2O3 and HfO2, to improve the breakdown voltage. The Al2O3 and HfO2 passivation structures achieved breakdown voltage improvements of 6.62% and 17.45%, respectively, compared to the basic Si3N4 passivation structure. However, the increased parasitic capacitances reduced the cut-off frequency. To mitigate this reduction, the operational characteristics of hybrid and partial passivation structures were analyzed. Compared with the HfO2 passivation structure, the HfO2 partial passivation structure exhibited a 7.6% reduction in breakdown voltage but a substantial 82.76% increase in cut-off frequency. In addition, the HfO2 partial passivation structure exhibited the highest Johnson's figure of merit. Consequently, considering the trade-off relationship between breakdown voltage and frequency characteristics, the HfO2 partial passivation structure emerged as a promising candidate for high-power and high-frequency AlGaN/GaN HEMT applications.

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

0.2- AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition Passivation

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

High-Performance GaN HEMTs on Single Crystalline AlN Templates with a 230 Nm Ultra-Thin Buffer and Al2O3/SiO2 Passivation

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Study

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

High RF Performance GaN-on-Si HEMTs With Passivation Implanted Termination

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics