Abstract:Herein, by modulating 2DEG concentration ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n s ), a superior GaN RF HEMT with a high-Al-content AlGaN barrier is reported for high power-density ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P out ) X-band applications. Thanks to a high <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n s of 1.3×10 13 cm -2 enabled by the Al 0.32 Ga 0.68 N barrier, as well as the regrown n + -GaN ohmic contacts, the device exhibits an output drain current ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I D ) of 1.6 A/mm, an on-resistance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R ON ) of 1.10 Ω·mm, and maintain a breakdown electric field ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E BC ) of ~0.8 MV/cm. As a result, at 10 GHz, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P out of 10.4 W/mm and power-added efficiency (PAE) of 63.2% are obtained at a moderate drain bias ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V D ) of 28 V. Notably, the results of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I D – <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">E BC , <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P out – <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V D , and the figure-of-merit <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P out / <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V D of our device marks one of the best records among X-band GaN HEMTs, showing strong competitiveness of high-Al-content AlGaN/GaN HEMTs for high- <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P out RF applications.

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

2DEG-Concentration-Modulated High-Power-Density AlGaN/GaN RF HEMTs

AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Direct Current and Microwave Characteristics of Sub-Micron Algan/Gan High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V d = 12 V

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

Research Progress on AlGaN/GaN-based HEMT

T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates