Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Development of High Breakdown Voltage AlGaN/GaN HEMT for Power Switching Device

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

High Performance AlGaN/GaN Power Switch with Si3N4insulation

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

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Design and electrical modelling of a depletion-mode P-type triple-field-plated AlGaN/GaN on SiC HEMT with 2.45 kV breakdown voltage

AlN/beta-Ga2O3 based HEMT: a potential pathway to ultimate high power device

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

5.3A/400V Normally-off AlGaN/GaN-on-Si MOS-HEMT with High Threshold Voltage and Large Gate Swing

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CMOS-compatible Ehancement-Mode GaN-on-Si MOS-HEMT with High Breakdown Voltage (930V) Using Thermal Oxidation and TMAH Wet Etching

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Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

High-performance Normally off AlGaN/GaN High Electron Mobility Transistor with P-Type H-Bn Cap Layer

Breakdown Voltage Enhancement For Gan High Electron Mobility Transistors