Abstract:Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on β-gallium oxide (β-Ga 2 O 3 ) wafers with various back barrier (BB) materials have garnered considerable attention, mainly due to the superior sheet charge density achieved by the confinement of a large number of electrons in the quantum well, which improves RF performance even further. This work investigates the role of different BB materials of Fe-doped AlGaN buffer AlN/GaN HEMTs on β-Ga 2 O 3 wafers (substrate) with gate–source ( L GS ) and gate–drain ( L GD ) distances of 0.4 μm and 1.2 μm, respectively. When compared to traditional substrates such as silicon carbide and silicon, a β-Ga 2 O 3 substrate is more affordable, is accessible in large wafer sizes, and has a lower lattice mismatch (0.4–2.4%) with AlGaN alloys. The effects of gate length scaling (Lg = 50 nm, 100 nm, and 150 nm) on the proposed HEMT devices were also analysed. The short-channel effects can be mitigated by introducing BB structures, which helps avoid further scaling of the barrier layer. With a p-diamond BB of 100 nm thickness, an Fe-doped AlGaN buffer rectangular gated AlN/GaN HEMT Lg = 50 nm results in maximum I D of 5.23 A/mm, g m of 1723 mS/mm, and f T of 361.6 GHz. This superior DC/RF performance can be achieved due to the large confinement of charge carriers into the quantum well and the low leakage current achieved by introducing BB structures and Fe-doped AlGaN buffer. With this outstanding performance, the proposed HEMT device is a promising candidate for next-generation RF applications.

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