Abstract:This paper proposes a novel normally-off p-GaN gate InAlN/GaN HEMT to replace p-GaN gate AlGaN/GaN HEMT for improving the device stability, enhancing saturation current, reducing the on-state resistance, improving the cut off frequency and decreasing the subthreshold swing. Due to the higher two-dimensional electron gas induced by the polarization, the on-state resistance for p-GaN gate InAlN HEMT can be lowered by 23% while the on-state current can be enhanced by 161% comparing with the common p-GaN gate AlGaN HEMT at Vgs = 5 V. The cut off frequency of InAlN HEMT is 11.5 GHz, which is 39% higher than that of AlGaN HEMT. While the low breakdown voltage (BV) of InAlN HEMT restricts the device performance and power application. The thickness and permittivity of the passivation layer are found to influence the BV of the device significantly, due to the alleviation of peak electric field at the drain-side gate edge, leading to a much smoother distribution of electric field in the channel. A proposed structure with TiO2 passivation layer exhibits a breakdown of 1028 V, showing 25% increase in breakdown voltage compared to the TiO2 passivation layer AlGaN HEMT. These simulation results revealed that the p-GaN gate InAlN/GaN HEMT is a reliable candidate in power application.

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

Effects of Gate Work Function on E-mode AlGaN/GaN HEMTs with Stack Gate Β-Ga2o3/p-gan Structure

Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Improved Dram Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga<sub>2</sub>O<sub>3</sub>/p-GaN structure

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga2O3 back barrier

High-performance Normally off AlGaN/GaN High Electron Mobility Transistor with P-Type H-Bn Cap Layer

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Suppression of leakage current of p-GaN gate AlGaN/GaN HEMTs with beta-Ga<sub>2</sub>O<sub>3</sub> back barrier

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer