High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate
Hsiang-Chun Wang,Taofei Pu,Xiaobo Li,Chia-Hao Liu,JunYe Wu,Jiaying Yang,Ziyue Zhang,Youming Lu,Qi Wang,Lijun Song,Hsien-Chin Chiu,Jin-Ping Ao,Xinke Liu
DOI: https://doi.org/10.1109/ted.2022.3193991
IF: 3.1
2022-09-03
IEEE Transactions on Electron Devices
Abstract:A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT on GaN substrate (GaN-HEMT) demonstrated the higher current density, lower subthreshold swing (SS), lower drain leakage current, and lower static and dynamic ON-resistance that were ascribed to the lower dislocation and less defect on free-standing GaN substrate. Meanwhile, the excellent stability up to 175 °C and uniformity was demonstrated. Also, higher breakdown voltage (BV) of 683 V was measured, which was higher than 507 V for Si-HEMT. Hence, a normally- OFF AlGaN/GaN HEMT on free-standing GaN substrate shows good potential in power application.
engineering, electrical & electronic,physics, applied