Abstract:A novel enhancement-mode (E-mode) high electron mobility transistor (HEMT) with three-dimensional electron gas (3DEG) and three-dimensional hole gas (3DHG) is presented. It features a GaN-top layer, a positive graded AlGaN barrier layer (GAL), and a negative graded AlGaN back barrier layer (GABL) (wherein the positive/negative doping gradient is defined with respect to the growth direction), with a vertical conduction channel aside a MIS trench gate. The 2DHG is formed at the interface between the GaN-top layer and GAL. The 3DEG and 3DHG are formed due to the polarization induced by linearly grading Aluminum (Al) composition from 0 to x(Al) in GAL and 0.4 to 0 in GABL, respectively. The source and drain locate at the same side of the MIS trench gate, and the source contacts with the gate. Firstly, 2DHG blocks the electron current conduction path between the source and 3DEG so as to achieve E-mode. Secondly, the high-sheet density 3DEG in GAL greatly increases the on-state current. Thirdly, the leakage current effectively is reduced by the 3DHG in GABL, improving the breakdown voltage. Fourthly, a high breakdown voltage (BV) is obtained because the polarization junction formed by the polarization charges in GAL and GABL improves the electric field distribution in the drift region. The BV of the proposed HEMT increases to 1080 V from 47 V of the conventional MIS HEMT at the same length of the drift region, and specific on-resistance (R-on,(sp)) decreases to 0.29 m Omega cm(2) from 0.64 m Omega cm(2) in simulation.

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Improved Dram Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics

High-performance Normally off AlGaN/GaN High Electron Mobility Transistor with P-Type H-Bn Cap Layer

High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design

Gate and barrier layer design of E-mode GaN HEMT with p-GaN gate structure

High Performance Enhancement-Mode HEMT with 3DEG to Conduct Current and 3DHG As Back Barrier

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure

Performance improvement of enhancement-mode GaN-based HEMT power devices by employing vertical gate structure and composite interlayers

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Effects of Gate Work Function on E-mode AlGaN/GaN HEMTs with Stack Gate Β-Ga2o3/p-gan Structure

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability*

Normally-OFF AlGaN/GaN-based HEMTs with Decreasingly Graded AlGaN Cap Layer

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga<sub>2</sub>O<sub>3</sub>/p-GaN structure