Abstract:In this work, high-performance stacked gate-all-around (GAA) a-IGZO 2-layer nanosheets field-effect transistors (NSFET) has been demonstrated for the first time, with the entire thermal budget below 300°C with back-end-of-line (BEOL) compatibility. The performance of the GAA IGZO nanosheet FETs can be successfully improved for over twice of the single channel. As high-k HfLaO dielectric scales from 10 nm to 4 nm, a short channel 50 nm-long transistor exhibits a record-high g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> of 1.13 mS/µm at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> =1.5 V and record-high on-state current of 2.05 mA/µm at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> =1 V, the highest among all IGZO-based FETs. Meanwhile, the same short channel transistor achieves ultra-low SS of 66 mV/dec, realizing a record-high quality factor g <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> /SS larger than 10 for the first time among a-IGZO transistors. The GAA NSFETs also show I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> <10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> µA/µm (measurement limit) and a high on/off ratio > 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> despite the 4 nm thin high-k dielectric.

First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

Vertical Sandwich GAA FETs with Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance

Demonstration of L-Shaped Tunnel Field-Effect Transistors

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Vertical N-Type and P-Type Nanosheet FETs with C-Shaped Channel

First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I<inf>d</inf> = 2.05 mA/µm, g<inf>m</inf> = 1.13 mS/µm and Ultralow SS = 66 mV/dec

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

First Experimental Demonstration of Gate-All-around III&#x2013;V MOSFETs by Top-Down Approach

First Experimental Demonstration Of Gate-All-Around Iii-V Mosfets By Top-Down Approach

First Experimental Demonstration of 100 Nm Inversion-Mode InGaAs FinFET Through Damage-Free Sidewall Etching

Large-scale sub-5-nm vertical transistors by van der Waals integration

High performance tunnel field-effect transistor by gate and source engineering.

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS<sub>2</sub> Nanosheets GAA-FET with I<sub>on</sub>>700 A/m and MoS<sub>2</sub>/WSe<sub>2</sub> CFET

First Demonstration of RESURF and Superjunction SS- Ga2O3 MOSFETs with P-Nio/n- Ga2O3 Junctions