Abstract:Electrospinning‐derived aligned IGZO (a‐IGZO) NFN FETs are achieved. The superior electrical performance of the transistors is comparable to devices of the same type fabricated in high‐temperature processes. The successful assembly of multi‐scenario devices based on a‐IGZO FETs also confirms thepotential of electrospun highly oriented inorganic fiber arrays obtained in low‐temperature processes forapplications in nano‐integrated circuits andvarious functional devices. Metal oxide field‐effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large‐area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high‐performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a‐IGZO) nanofiber arrays with low‐thermal‐budget of 350 °C and impressive device characteristics are achieved, including a μFE of 5.63 cm2 V–1 s–1 and superior on/off current ratio of ≈107. When ALD‐derived high‐k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V–1 s–1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a‐IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low‐power, high‐performance flexible electronics.

First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I<inf>d</inf> = 2.05 mA/µm, g<inf>m</inf> = 1.13 mS/µm and Ultralow SS = 66 mV/dec

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

BEOL-Compatible High-Performance A-Igzo Transistors with Record High Ids,max = 1207 Μa/μm and On-off Ratio Exceeding 1011 at Vds = 1V

A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current

20&Amp;#x2013;80nm Channel Length InGaAs Gate-All-around Nanowire MOSFETs with EOT&#x003D;1.2nm and Lowest SS&#x003D;63mV/dec

Electrospun Highly Aligned IGZO Nanofiber Arrays with Low‐Thermal‐Budget for Challenging Transistor and Integrated Electronics

First Experimental Demonstration of Gate-All-around III&#x2013;V MOSFETs by Top-Down Approach

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance

First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

First Experimental Demonstration Of Gate-All-Around Iii-V Mosfets By Top-Down Approach

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I<inf>d</inf> of 2.32 mA/μm and g<inf>m</inf> of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

P‐1.12: Sub‐200nm Nano‐scale Indium‐Zinc‐Oxide Ultra‐thin Channel Transistors

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

A Dual-Gate Vertical Channel IGZO Transistor for BEOL Stackable 3D Parallel Integration for Memory and Computing Applications

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing