Abstract:Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10-20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium-gallium oxide (IGO)/gallium-zinc oxide (GZO) and indium-zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFE of 76.7 ± 0.51 cm2/(V s), VTH of -0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and ION/OFF of 2.5 × 1010 with low operation voltage range of ≥2 V and excellent stabilities (ΔVTH of +0.35, -0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays.

BEOL-Compatible High-Performance a-IGZO Transistors with Record high I<inf>ds,max</inf> = 1207 μA/μm and on-off ratio exceeding 10<sup>11</sup> at Vds = 1V

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region

High Baliga’s Figure of Merit Amorphous InGaZnO Power Transistor With Ultra-Thin Indium Zinc Oxide Buried Layer

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Sub-100 Nm Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors with Gate Insulator of 4 Nm Atomic-Layer-Deposited AlOx

High-Performance Fully Thermal ALD-Processed IGZO Thin Film Transistors

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length

First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record I<inf>d</inf> = 2.05 mA/µm, g<inf>m</inf> = 1.13 mS/µm and Ultralow SS = 66 mV/dec

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions