Abstract:In this work, high-efficiency millimeter-wave enhancement-mode (E-mode) Fin-high electron mobility transistor (HEMT) is fabricated to satisfy low-voltage terminal applications, whose fabrication process is performed on the in situ SiN passivated ultrathin-barrier AlGaN/GaN heterojunction and features N $_{ ext{2}}$ O plasma oxidation treatment on the fins. Specifically, the fabricated E-mode Fin-HEMT exhibits a positive threshold voltage of 0.3 V, at the cost of decreased maximum output current density of 483 mA/mm and lowered peak extrinsic transconductance of 277 mS/mm. Comfortingly, a reduced knee voltage of 1.5 V together with suppressed OFF-state leakage current of 6 $ imes$ 10 $^{- ext{6}}$ mA/mm is also obtained for Fin-HEMT. Besides, an OFF-state breakdown voltage of 38 V is achieved, which is sufficiently high to meet the low-voltage RF device’s need for breakdown voltage. Pulsed $ extit{I}$ – $ extit{V}$ measurement shows that a negligible current collapse (CC) is achieved for Fin-HEMT. Additionally, Fin-HEMT demonstrates a good stability by stress reliability test. Subsequently, the $ extit{f}_{ extit{T}}$ / $ extit{f}_{ ext{MAX}}$ value of 40/86 GHz is obtained for Fin-HEMT at $ extit{V}_{ ext{DS}}$ of 6 V by small signal measurement. Eventually, the millimeter-wave low-voltage load pull measurement shows that the fabricated E-mode Fin-HEMT is able to deliver a decent power added efficiency (PAE) of 55% at 30 GHz and $ extit{V}_{ ext{DS}}$ of 6 V, revealing the great potential of the fin configuration combined with ultrathin-barrier AlGaN/GaN heterojunction passivated by in situ SiN and N $_{ ext{2}}$ O plasma oxidation treatment in high-efficiency millimeter-wave low-voltage terminal applications.

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Improvement of RF Performance for AlGaN/GaN HEMT by Using a Cavity Structure

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

Fabrication of 150-Nm Al 0.48 in 0.52 As/Ga 0.47 in 0.53 As Mhemts on GaAs Substrates

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V f max ·V BK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

Optimized recess etching criteria for T‐gate fabrication achieving ft= 290 GHz at Lg= 124 nm in metamorphic HEMT with In0.7Ga0.3As channel

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer