Abstract:This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize the current conduction and voltage blocking characteristics of the regrown sidewall p-n junction, which has been regarded as the key building block of future high-voltage GaN power devices. Control samples with planar regrown p-n junctions are first used to optimize the regrowth conditions. The planar junction characteristics show considerable improvement by adding the Mg pre-flow (Cp2Mg) before the p-GaN regrowth, which is attributed to the Mg out-diffusion beyond the regrowth interface. A record high ratio between the Mg concentration and the maximum impurity (C, Si, O) spike at the regrowth interface is demonstrated. Using the optimal regrowth conditions, the fabricated p-GaN/2DEG junction diodes show excellent rectifying behavior with an on/off ratio of over 5 x 10(7) in both large-area devices and the multi-finger devices with 1 mu m-wide finger trenches. A breakdown voltage over 100 V is demonstrated, where the peak electric field is estimated to be at least 2.5 MV/cm at the sidewall junction. These results not only suggest that p-GaN trench-filling regrowth is a viable approach for selective-area p-type doping in GaN power devices but also open a door for the development of unconventional GaN devices based on p-GaN/2DEG junctions.

Demonstration of a Lateral P-Nio/n-gan JFET Fabricated by Selective-Area Regrowth

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET with Optimized Electrical Field Transfer Terminal Structure

Simulation And Design of a Vertical Gallium Nitride JFET with Dual Lateral Heterojunction Channels

Lateral P-Gan/2deg Junction Diodes By Selective-Area P-Gan Trench-Filling-Regrowth In Algan/Gan

Normally-off trench JFET technology in 4H silicon carbide

First Demonstration of RESURF and Superjunction SS- Ga2O3 MOSFETs with P-Nio/n- Ga2O3 Junctions

Demonstration of Β-Ga₂o₃ Superjunction-Equivalent MOSFETs

Demonstration of β-Ga2O3 Superjunction-Equivalent MOSFETs

Demonstration of the P-Niox/n-ga2o3 Heterojunction Gate FETs and Diodes with BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Normally-off Β-Ga2o3 Power Heterojunction Field-Effect-Transistor Realized by P-Nio and Recessed-Gate

Enhanced Gate Breakdown in Β-Ga2o3hjfet Through a NiOx/GaOxp-n Junction Gate Stack

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process

A Novel Junction Field Plates AlGaN/GaN Heterostructure Field Effect Transistors with High Breakdown Voltage and Baliga's Figure of Merit for Power Electronics Application

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer As Recess Mask

First Demonstration of Vertical Superjunction Diode in GaN

Study of drain induced channel effects in vertical GaN junction field-effect transistors