Abstract:Silicon carbide (SiC) super junction (SJ) JFETs fabricated by sidewall implantation with different mesa-widths (MWs) and termination designs are characterized in this article. The device with an MW of $1.8 \mu \text{m}$ and active area of 0.104 mm2 achieves a breakdown voltage of 1086 V and a specific ON-resistance of 0.98 $\text{m}\Omega \,\cdot $ cm2. The first-quadrant output and transfer characteristics are presented, from which the ON-resistance and pinch-off voltage are extracted and analyzed. The pinch-off voltage shows great stability against the variation of temperature. The forward blocking characteristics under different gate voltages and with different terminations are presented. The gate needs to be negatively biased below the hold-off voltage to prevent the premature breakdown caused by drain-induced barrier-lowering (DIBL) effect. The termination with narrow mesas in the ${x}$ -direction and trapezoidal mesas in the ${y}$ -direction is found to have the highest breakdown voltage, due to its optimized net charge distribution. The third-quadrant output characteristics are presented. Under forward-off gate voltage, the third-quadrant turn-on voltage is found to be determined by the difference of hold-off and pinch-off voltages, and there is a tradeoff between the absolute third-quadrant voltage drop ( $\vert {V}_{\text{on}}\vert $ ) and the maximum current before gate junction turn-on ( ${J}_{\text{umax}}$ ). The third-quadrant performance can be improved by using forward-on gate voltage, a $\vert {V}_{\text{on}}\vert $ lower than 0.2 V (at 100 A/cm2) and a ${J}_{\text{umax}}$ larger than 500 A/cm2 are achieved. Finally, the whole output characteristics are modeled to facilitate the device design in different applications.

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Normally-off trench JFET technology in 4H silicon carbide

Characterization and Analysis of 4H-Sic Super Junction JFETs Fabricated by Sidewall Implantation

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

A High Performance 4H-Sic Normally-off VJFET

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Design and Application of High-Voltage SiC JFET and Its Power Modules

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

Hybrid Termination with Wide Trench for 4H-Sic Super-Junction Devices

Design Consideration and Fabrication of 1.2-Kv 4H-Sic Trenched-And-Implanted Vertical Junction Field-Effect Transistors

Design and Experimental Demonstration of 1.35 Kv SiC Super Junction Schottky Diode

Experimental Demonstration and Analysis of a 1.35-Kv 0.92-M $\omega \cdot \text {cm}^{2}$ SiC Superjunction Schottky Diode

Development of SiC Superjunction MOSFET: A Review

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Development of 4H-SiC LJFET-Based Power IC

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction

Bidirectional Current 4h‐sic VJFET

Current Status and Future Prospects of SiC Power JFETs and ICs.

Optimized JFET Regions of 4H-Sic VDMOS with Reduced On-Resistance and Improved Gate Oxide Reliability