Abstract:This paper reports recent progress in the development of a vertical MET, the purely vertical JFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the need of epitaxial regrowth at middle of device fabrication and the need of a merged lateral MET to control the vertical MET. Different structures have been designed to target breakdown voltages ranging from 600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility of achieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size of the designs has been reduced compared to early report. Gate trench width has been reduced from 3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have been tested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC and switching characteristics at room and elevated temperatures. Very fast current rise/fall times of < 1ns were observed from RT to 200 degrees C. PSpice model for TI-VJFET has been developed and applied to the performance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200 degrees C junction temperature without using soft-switching scheme. Preliminary experimental demonstration of a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported.

Development of High Temperature Lateral HV and LV JFETs in 4H-SiC

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Development of 4H-SiC LJFET-Based Power IC

High Temperature Physical Modeling and Verification of a Novel 4H-Sic Lateral JFET Structure

Normally-off trench JFET technology in 4H silicon carbide

High Frequency Switching of Sic High Voltage Ljfet

430-V 12.4- $hboxmomegacdot Hboxcm^2$ Normally off 4H-Sic Lateral JFET

A High Performance 4H-Sic Normally-off VJFET

Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-Sic

Numerical and Experimental Investigation on Bipolar Operation of 4H-SIC Normally-on Vertical JFETs

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

4H-Sic Super-Junction JFET: Design and Experimental Demonstration

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

Design and Application of High-Voltage SiC JFET and Its Power Modules

Bidirectional Current 4h‐sic VJFET

1000-V 9.1- $\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Design Consideration and Fabrication of 1.2-Kv 4H-Sic Trenched-And-Implanted Vertical Junction Field-Effect Transistors

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Demonstration of the first SiC power integrated circuit

Complementary junction field-effect transistor logic gate operational at 300$^\circ$C with 1.4 V supply voltage

The Development of the 200 V VDMOS with Large Current