Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range
Ximing Chen,Xuan Li,Bangbing Shi,Junmiao Xiang,Yuanzhuo Dai,Chenzhan Li,Xiaochuan Deng,Haihui Luo,Yudong Wu,Bo Zhang
DOI: https://doi.org/10.1109/tpel.2021.3056435
IF: 5.967
2021-08-01
IEEE Transactions on Power Electronics
Abstract:In this letter, the origin and related physical insights of gate reliability issues under various V<sub>gs</sub> and high temperatures (up to 300 °C) are revealed in-depth, through splitting MOS gate structure of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) into N-type JFET and P-type channel region under identical manufacturing processes and thermal budgets of SiC MOSFETs. From 25 to 300 °C, the safety limit of positive V<sub>gs</sub> of SiC MOSFETs is mainly dependent on the gate oxide on the JFET surface, whereas that of negative V<sub>gs</sub> is dependent on the gate oxide on the channel surface. The gate oxide on the channel surface is weaker than that on the JFET surface in terms of Fowler–Nordheim (F-N) tunneling, resulting in asymmetric safety V<sub>gs</sub> of current SiC MOSFET. Moreover, when temperature ranges from 25 to 150 °C, the degradation of gate oxide under −15 V < V<sub>gs</sub> < 25 V is caused by the hole or electron direct tunneling mechanism. However, when the temperature reaches 300 °C, the degradation of gate oxide under −5 V < V<sub>gs</sub> < 10 V is caused by the hole or electron hopping conduction mechanism. Furthermore, the reliability of gate oxide is evaluated by the time-dependent dielectric breakdown measurement. The charge-to-breakdown (Q<sub>BD</sub>) of gate oxide is severely degraded -t 300 °C mainly due to the barrier height (${it{ Phi}}_{rm B}$) degradation. These efforts can provide accurate weakness points of gate oxide under higher V<sub>gs</sub> bias (particular for negative bias) and higher temperature (300 °C) for SiC MOSFETs, further helping use and design rugged converters with the fast-speed operation of SiC MOSFETs.
engineering, electrical & electronic