Abstract:Due to the outstanding material properties, silicon carbide (SiC) power device is the most promising alternative to silicon devices and can work at higher junction temperature. However, existing packaging technologies obstruct the use of SiC devices at high temperature and impede the continued exploration of SiC devices in high-temperature applications. This article proposes a novel hermetic metal packaging method called compact-interleaved package. The compact-interleaved power module handles the mentioned problems from three key considerations: packaging parasitic parameters, direct electrode measurement structure, and packaging materials. Based on the elaborate high-temperature double pulse test platform, dynamic characteristics of 1.2-kV/13-mΩ 4H-SiC power mosfet are studied under the condition of extremely high junction temperature (up to 550 °C) and extremely high switching speed (about 3 kA/μs). The dynamic characteristics of SiC mosfet are theoretically analyzed and verified by experimental measurements. Compared with other SiC bipolar devices, SiC mosfet maintains outstanding dynamic characteristics at extremely high temperatures and has an optimal operating high-temperature range. Finally, this article demonstrates an extreme-high-temperature power electronic converter to verify the superiority of the packaging method, and also proves the extreme-high-temperature power converting capability of SiC mosfet.

An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

Design and experimental analysis of a 1 kW, 800 kHz all-SiC boost DC-DC converter

High-temperature Characteristics of SiC Module and 100 Kw SiC AC-DC Converter at a Junction Temperature of 180 °C

10 Kv SiC MOSFET Based Boost Converter

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

An analog to digital converter in a SiC CMOS technology for high-temperature applications

High-voltage full-SiC power module: Device fabrication, testing and high frequency application in kW-level converter

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET

High power SiC inverter module packaging solutions for junction temperature over 220°C

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

A High Temperature Gate Drive Circuit for SiC MOSFET

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

High Temperature Stability and the Performance Degradation of SiC MOSFETs

High-temperature Electrical Characteristics of JBS-integrated 4H-Sic MOSFETs

High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application

Fabrication and testing of 3500V/15A SiC JFET based power module for high-voltage, high-frequency applications

High Current Gate Drive Circuit with High Temperature Potential for SiC MOSFET Module

Design and Application of High-Voltage SiC JFET and Its Power Modules