Abstract:The demand for accurate temperature sensing in extreme temperatures is increasing. Traditional silicon-based integrated temperature sensors usually cannot survive above 200 °C. Many researchers have started to focus on semiconductors with a large bandgap. Among them, silicon carbide (SiC) is the most promising one. Nevertheless, most reported SiC sensors are in the form of discrete components and are not compatible with integrated electronics. In this work, we demonstrate an open 4H-SiC CMOS technology, and the fabrication steps are detailed. The temperature sensing elements in this technology, including resistors based on different implanted layers and MOSFETs, are characterized up to 600 °C. At room temperature, the resistive-based elements demonstrate large negative temperature coefficients of resistance (TCRs). With increasing temperature, the TCR starts to decrease and even becomes positive. The TCR change is due to the interplay between increasing dopant ionization rate and decreasing mobility as a function of temperature. The resistance change with temperature fits well into the Steinhart-Hart model and second-order polynomial equation. The p-type diode-connected MOSFET has a sensitivity of 4.35 mV/°C with a good linearity. The nMOS-based sensor has a maximum sensitivity of −9.24 mV/°C but a compromised linearity. The characterization of these sensing elements provides important results for potential users who will work on SiC integrated temperature sensing with this technology.

An analog to digital converter in a SiC CMOS technology for high-temperature applications

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Temperature Sensing Elements for Harsh Environments in a 4H-SiC CMOS Technology

An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature

A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

Static and Dynamic Characteristics of SiC MOSFET under Extremely High Temperature

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Complementary junction field-effect transistor logic gate operational at 300$^\circ$C with 1.4 V supply voltage

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

High-temperature Characteristics of SiC Module and 100 Kw SiC AC-DC Converter at a Junction Temperature of 180 °C

Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C

A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET

High-Temperature Characterization of a 1.2-Kv SiC MOSFET Using Dynamic Short-Circuit Measurement Technique

Bidirectional Current 4h‐sic VJFET

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

Simulated Performance of SiC Based OP-AMP at High Temperature

Design of high temperature SiC LJFET-based logic inverter and integrated gate driver

Characteristics of SiC MOSFET in a Wide Temperature Range

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

A High Temperature Gate Drive Circuit for SiC MOSFET