Abstract:With integrated circuits and semiconductor technology development, chip packaging tends to be miniaturized and highly integrated. The advent of third-generation wide-bandgap (WBG) semiconductors such as SiC and GaN, which allow chips to operate at high temperatures (above 300°C), poses a major challenge for chip packaging. Chip attachments are key to achieving reliable operation of power semiconductor devices, as they play an important role in the physical and electrical connection of the chip to the substrate. For this, metal particles are considered an ideal choice because of their low sintering temperature, high performance and reliability under extreme conditions. Sintered silver pastes have received increasing attention as a new method of chip connection. However, the practical application of sintered silver is very limited due to its high cost and low resistance to electromigration. Copper is known to be much cheaper than silver and has similar electrical and thermal conductivity to silver. More importantly, copper has excellent resistance to electromigration. These unique properties make it a very promising material for chip connections. There have been some reports on the reliability assessment of sintered silver materials, but very little has been reported on sintered copper materials.In this paper, a detailed analysis of the stress-strain variation pattern of the sintered copper layer during temperature cycling (TC) and power cycling (PC) of a typical planar MOSFET device is presented using finite element analysis. In PC, the relationship between heating power and temperature is investigated using a coupled thermal-force approach, and the effect of temperature variations inside the device on the stress in the sintered copper layer is analyzed. In addition, we have constructed the chip under ideal conditions and investigated the key factors affecting the stresses in the connecting layer of the chip during temperature cycling, thus providing assistance in reducing stresses and improving reliability. Our work aims to offer assistance in the qualitative and quantitative evaluation of the operational lifespan of power devices.

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Investigation of Electrical and Thermal Properties of Epoxy Resin/Silicon Carbide Whisker Composites for Electronic Packaging Materials

Overview of Finite-Element Analysis in Simulation of SiC Power Device Packaging

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

A Solution to Press-Pack Packaging of SiC MOSFETS

Design and evaluation of press-pack SiC MOSFET

High temperature wireless packaging of SiC power device by organic-free die-attach material sintering

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

High-Reliability Wireless Packaging for High-Temperature SiC Power Device Sintered by Novel Organic-Free Nanomaterial

Review of Die-Attach Materials for SiC High-Temperature Packaging

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Liquid Metal Fluidic Connection and Floating Die Structure for Ultra Low Thermomechanical Stress of SiC Power Electronics Packaging

A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Analysis of Press-Pack SiC MOEFET'S Parasitic Resistance

Simulation of performance and reliability of nanocopper paste in power device packaging

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules