Abstract:Silicon carbide (SiC) power modules are attractive in many applications due to the superiority of their semiconductor characteristics. However, power modules are subjected to repetitive thermo-mechanical stress caused by the mismatch of the coefficient of thermal expansion between different layers of materials. Moreover, the relatively smaller die size of SiC chips makes the heat flux increase significantly, which brings new challenges to the thermal management and reliability of SiC power modules. To tackle these challenges, this article proposes a new thermal enhanced packaging method based on vapor chamber (VC) phase change heat spreader (PCHS) for SiC power modules, achieving the advantages of high thermal conductivity, low weight, low cost, and low thermal stress. In this new design, SiC mosfet bare dies are directly soldered on the top of VC-PCHS, which not only act as heat spreaders but also conduct the drain current of mosfets. The integrated VC-PCHS is optimized based on thermal and thermomechanical performance. An SiC power module prototype directly integrated with VC-PCHS is built using a new fabrication process. Both the simulations and experiments demonstrate significant improvements in thermal and thermomechanical performance. The modules integrated with VC-PCHS can operate under 200 W of power dissipation per die (632 Wcm2) without exceeding the maximum rated junction temperature. This article reveals the potential of directly integrating phase change cooling components inside power modules, providing a new solution to improve the thermal performance and reliability of SiC power modules without adding complexity and energy consumptions to external cooling systems.

Structure and the Thermal Management of a 3-D Silicon Carbide MOSFET Module

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Directly Integrated Vapor Chamber as an Efficient Heat Spreader for High Heat Flux Density SiC MOSFET Dies in Power Modules

Understanding the Thermal Characteristics of SiC Power MOSFET Device for Power Modules Design

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

Characterization of Electro-Thermal Coupling Behaviors and Safe Operating Area of SiC MOSFET Modules in Pulsed Power Applications

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Comparative Study of Thermal Performance of a SiC MOSFET Power Module Integrated with Vapor Chamber for Traction Inverter Applications

Design and evaluation of press-pack SiC MOSFET

A Novel Double-sided Cooling 3L-ANPC SiC MOSFET Power Module with Interleaved Layout

A Novel Substrate-Baseplate Structure for Medium Voltage SiC MOSFET Device

Electro-Thermal Coupling Characteristics and Modeling of SiC MOSFET Modules under High Pulse Current Conditions

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux

A Novel SiC MOSFET Module for High-power Soft-switching Converter

A Double-Sided Cooling 6.5kv SiC MOSFET Power Module with Insulation Enhancement Design

A Solution to Press-Pack Packaging of SiC MOSFETS

Electrothermal Analysis of a Double-side Cooling Power Module with Large-area SiC MOSFETs