Abstract:As the next generation of semiconductor devices, SiC MOSFETs have demonstrated significant performance improvements in switching loss, switching frequency, and high-temperature operation compared to Si-based MOSFETs. However, the long-term reliability of such devices and their packaging continues to be a major concern. Towards addressing this challenge, this study proposes a multi-objective optimization design method for parasitic inductance (L), thermal strain (epsilon), and thermal resistance (R) of SiC MOSFETs with Fan-Out Panel-Level Packaging (FOPLP). First, the orthogonal experimental design was employed to investigate the thickness effects of baseplate, solder, die and redistribution layer (RDL) on L, epsilon, and R. Then, the multi-objective optimization was developed to simultaneously reduce L, epsilon, and R. Finally, the fatigue lifetimes of the optimized and initial SiC MOSFET FOPLP structures were compared to verify the optimization's accuracy. Study findings include: (1) Solder thickness was the most significant influence factor for L, e and R of SiC MOSFET FOPLP, L and R increased, and e decreased with increasing solder thickness; (2) The proposed multi-objective optimization method coupled with a genetic algorithm achieved 14.79, 8.96, and 9.28% reduction of L, epsilon, and R, respectively; (3) The fatigue lifetime of solder (SAC305) was evaluated using the Coffin-Manson model, with predicted lifetimes before and after optimization being 6786 and 7085 cycles, respectively, demonstrating that the proposed approach significantly enhanced the designed SiC MOSFET FOPLP's long-term thermal cycling reliability.

A Solution to Press-Pack Packaging of SiC MOSFETS

Design and evaluation of press-pack SiC MOSFET

Fan-Out Panel-Level PCB-Embedded SiC Power MOSFETs Packaging

Analysis of Press-Pack SiC MOEFET'S Parasitic Resistance

Analysis of Novel Packaging Techniques for High Power Electronics in SiC

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Die Current Balancing of a Press-Pack SiC MOSFET

Compact Spatially Symmetric Double-Sided Embedded Packaging Method for Parallel SiC MOSFETs

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

A Novel SiC MOSFET Module for High-power Soft-switching Converter

A Thin and Low-Inductance 1200 V SiC MOSFET Fan-Out Panel-Level Packaging With Thermal Cycling Reliability Evaluation

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Packaging and Characterization of an Ultra Compact 1200V PCB SiC MOSFET Half-Bridge Module

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

A Double-Side Cooled SiC MOSFET Power Module With Sintered-Silver Interposers: I-Design, Simulation, Fabrication, and Performance Characterization

Performance limits of high voltage press-pack SiC IGBT and SiC MOSFET devices

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Directly Integrated Vapor Chamber as an Efficient Heat Spreader for High Heat Flux Density SiC MOSFET Dies in Power Modules

Thermal-mechanical-electrical Co-design of Fan-Out Panel-Level SiC MOSFET Packaging with a Multi-objective Optimization Algorithm

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package