A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Yu Ren,Xu Yang,Fan Zhang,Kangping Wang,Wenjie Chen,Laili Wang,Yunqing Pei
DOI: https://doi.org/10.1109/tie.2017.2711579
IF: 7.7
2017-01-01
IEEE Transactions on Industrial Electronics
Abstract:This paper presents a novel compact circuit combining function of gate control and voltage balancing for series-connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). Two seriesconnected SiC MOSFETs with the proposed circuit only require a single standard gate driver to achieve the gate control and voltage balancing during both steady-state and switching transition. Moreover, the proposed circuit is only composed of ten passive components. Therefore, the proposed circuit provides a low-cost and highly reliablemethod to increase the blocking voltage of the SiC MOSFET. The operation principles of the proposed circuit are theoretically analyzed. In addition, the high-blocking-voltage device is not only required in switching-mode power supply (SMPS) but also in dc-breaker applications. The proposed circuit is then modified to make it suitable to the dc-breaker applications. The simulation and experimental results validate the effectiveness and superiority of the proposed circuit in both SMPS and dc-breaker applications.
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