Abstract:High-voltage and fast-switching silicon carbide (SiC) power modules are needed to construct high-voltage and high power-density converters. Stacking multiple low-voltage SiC devices to increase the equivalent blocking voltage shows advantages in on-state resistance, current capacity, and cost over one single high-voltage device. An indirect series-connected SiC MOSFET power module using quasi-two-level hybrid-clamp topology is proposed in this article. The voltages across the devices are automatically balanced with an open-loop modulation strategy to avoid sensors and control algorithm. Moreover, only ceramic capacitors are needed besides the MOSFETs and diodes in the topology. Thanks to this, the topology was highly integrated into a power module using SiC dies, which is equivalent to a general-purpose two-level medium-voltage SiC MOSFET power module. The switching losses of the power module show advantages over other stacking methods and even a single high-voltage switch and it can be evaluated with a two-level half-bridge (HB). To achieve this, the automatic voltage-balancing performance is analyzed in detail and the parasitic output capacitance in the topology is investigated, based on which the design considerations are presented. The simulation results from LTspice confirm the voltage-balancing and a 3600V/20A HB power module is built in the lab and the experimental results verify the design.

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

Analysis and Flexible DV/DT Control of an Active Clamping Topology for Series-Connected SiC MOSFETs

ZVS range extension of 10A 15kV SiC MOSFET based 20kW Dual Active Half Bridge (DHB) DC-DC converter

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Voltage Balancing Method for Series-Connected SiC MOSFETs under No Load Condition

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

Active Gate Drive with Gate-Drain Discharge Compensation for Voltage Balancing in Series-Connected SiC MOSFETs

Hybrid Dynamic Voltage Balancing Technique for Series-Connected SiC MOSFETs

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

An Active Voltage Balancing Method for Series Connection of SiC MOSFETs with Coupling Inductor

An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance

A Gate Drive Circuit and Dynamic Voltage Balancing Control Method Suitable for Series-Connected SiC Mosfet S

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

A Dynamic Voltage Balancing Control Method for Series-Connected SiC MOSFETs in High Voltage Applications

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

Analysis for Crosstalk of SiC-MOSFET in a Bridge Circuit and Its Active-Clamped Driver Based Suppression Methods

A Quasi-Two-Level Medium-Voltage SiC MOSFET Power Module with Low Loss and Voltage Self-Balance

Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations