Abstract:The Solid-State Power Controller (SSPC) is an intelligent switch composed of power switches, voltage-current sensors, and a microcontroller. It integrates functions such as overvoltage protection, overcurrent protection, status reporting, and remote control. It is employed in industries with high reliability demands to perform on-off control of electrical loads. Due to the high voltage withstand capability, low on-resistance, and superior temperature tolerance of SiC MOSFETs, they are preferred as power switches in solid-state power controller to enhance their reliability. However, individual SiC MOSFETs have limited current-carrying capacity, necessitating the use of multiple devices in parallel to increase their current-carrying capability. Nevertheless, due to the inherent parameter variations among devices, straightforward parallel connection of silicon carbide devices fails to achieve automatic current sharing over the entire temperature range. Consequently, prolonged operation leads to thermal imbalances, severely impacting the reliable operation of the devices. Indeed, achieving current sharing in parallel SiC MOSFETs is crucial for ensuring the safe operation of the system. In light of this, a gate voltage adjustable active current sharing method for SiC MOSFETs has been proposed. This method takes advantage of the temperature-dependent on-resistance characteristic of SiC MOSFETs and introduces a novel SiC MOSFET driver circuit. By independently adjusting the gate voltage of each SiC MOSFET within the parallel configuration, the proposed method achieves effective current sharing control. By employing the Linear Active Disturbance Rejection Control (LADRC) algorithm, control precision and response speed are enhanced, allowing for precise adjustment of the gate voltage. Consequently, this approach significantly improves the balancing and reliability of the parallel operation of SiC MOSFETs. Through simulation and experimentation, the effectiveness and feasibility of the proposed method have been validated successfully.

Dynamic Current Balancing for Paralleled SiC MOSFETs with Circuit Mismatches Considering Circulating C Urrent in Drive Circuit

Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

Comprehensive Analysis of Paralleled SiC MOSFETs Current Imbalance under Asynchronous Gate Signals

Symmetric Circuit Layout with Decoupled Modular Switching Cells for Multiparalleled SiC Mosfets

Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs

Parallel Connection of Silicon Carbide MOSFETs Challenges, Mechanism, and Solutions

A Paralleled SiC MOSFET Half-bridge Unit with Distributed Arrangement of DC Capacitors

A Negative-Feedback Gate-Loop for Current Balancing Paralleled SiC MOSFETs Based on a Differential Mode Inductor

Imbalance Current Analysis and Its Suppression Methodology for Parallel SiC MOSFETs with Aid of a Differential Mode Choke.

Die Current Balancing of a Press-Pack SiC MOSFET

A Method to Balance Dynamic Current of Paralleled SiC MOSFETs With Kelvin Connection Based on Response Surface Model and Nonlinear Optimization

Output Curves Based Hierarchical Clustering Screening Method with Static/Dynamic Current Balancing for Paralleled SiC MOSFETs

Switching Current Imbalance Mitigation for Paralleled SiC MOSFETs Using Common-mode Choke in Gate Loop

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

A Gate Drive Circuit and Dynamic Voltage Balancing Control Method Suitable for Series-Connected SiC Mosfet S

A Hybrid Current Balancing Method for Multiple Paralleled SiC-MOSFET Half-bridge Modules

Current Sharing Behavior of Parallel Connected Silicon Carbide MOSFETs Influenced by Parasitic Inductance

Research on Current Sharing Method for SiC MOSFETs in Parallel Based on Adjustable Gate Voltage Driver

Effect of Asymmetric Layout and Unequal Junction Temperature on Current Sharing of Paralleled SiC MOSFETs with Kelvin-Source Connection