Abstract:In silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) short-circuit fault, large short-circuit current spikes during the delay time of short-circuit protection will increase its risk of damage and accelerate device degradation. This article proposed an ultrafast and low-invasive short-circuit current limiting method by gate voltage control for SiC mosfets with Kelvin-source. By introducing a negative feedback composed of a low-invasive analog circuit into the gate driver, the proposed current limiting method can effectively limit SiC mosfets short-circuit current. It offers the advantages including ultrafast response, almost no additional power losses, excellent universality, and easy devices selection. The basic physical principles of the current limiting method are explained and the detailed circuit design is given. Furthermore, considerations in circuit design are discussed, including the analysis of the laws governing the negative feedback system to aid in device selection. A prototype of a gate driver for SiC mosfet with desaturation protection and the proposed short-circuit current limiting circuit is constructed. Double pulse tests and short-circuit tests are conducted using two types of SiC mosfets with varying rated voltage and current ratings. The results indicate that the proposed current limiting method can reduce the peak current by 52.2% and the short-circuit energy by 57.1% with almost no additional conduction loss and less than 1% increase in switching loss. Additionally, during the short-circuit tests, the proposed current limiting method shows insensitivity to varying drain-source voltage and current rising rates, highlighting its exceptional universality.

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

The Integrated Fast Short-Circuit Protection Technique with Soft Turn-off for SiC MOSFET

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

A Design Model of Soft Turn-off Protection for SiC MOSFETs

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Short-circuit and overcurrent protection scheme of SiC MOSFET based on combined protection method

An Ultrafast and Low-Invasive Short-Circuit Current Limiting Method by Gate Voltage Control for SiC MOSFETs with Kelvin-Source

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

A High Speed Short-Circuit Protection Circuit with Current Limitation and Soft Turn-Off for High Power IGBTs

A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Short-circuit Capability of 1200V SiC MOSFET and JFET for Fault Protection

Analysis of Short-Circuit Behavior for SiC MOSFETs with Various Circuit Characteristics

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

A Digital‐controlled Gate Charge Detection Circuit for Short‐circuit Protection and Condition Monitoring of SiC MOSFET

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs

Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy