Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Modeling and Design Guideline of Optimal Split Inductance Range for Split-Output Power Module Considering Normal and Fault Conditions

A Novel SiC MOSFET Module for High-power Soft-switching Converter

Short-circuit and overcurrent protection scheme of SiC MOSFET based on combined protection method

A High Speed Short-Circuit Protection Circuit with Current Limitation and Soft Turn-Off for High Power IGBTs

A Compact Gate Control and Voltage-Balancing Circuit for Series-Connected SiC MOSFETs and Its Application in a DC Breaker

Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

A Design Model of Soft Turn-off Protection for SiC MOSFETs

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Analysis of A Low-Inductance Packaging Layout for Full-Sic Power Module Embedding Split Damping

Mitigating Gate Oscillations of Parallel SiC MOSFETs for Enhanced Performance in DC Solid-State Circuit Breaker

An Ultrafast and Low-Invasive Short-Circuit Current Limiting Method by Gate Voltage Control for SiC MOSFETs with Kelvin-Source

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Comparison Study on Short Circuit Capability of 1.2 Kv Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules