Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Comparison Study on Short Circuit Capability of 1.2 Kv Split-Gate MOSFET and Split-Source MOSFET with Integrated JBS Diode

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Comparative Study on Reliability and Application Features of SiC MOSFET

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

A Comparative Study of SiC MOSFETs with and Without Integrated SBD

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs

Improved Short-Circuit Protection Method for SiC MOSFET Split-Output Power Module Achieving Ultra-Low Fault Dissipated Energy

Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs