Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Comparative Study on Reliability and Application Features of SiC MOSFET

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Experiments of SiC MOSFETs in High DC Bus Voltage Boost Applications

Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

A Study on the Electrical Properties of High Voltage SiC Power MOSFET with Double Trench Structures

Avalanche Capability Characterization of 1.2 Kv SiC Power MOSFETs Compared with 900V Si CoolMOS

Comparing the State-of-the-Art SiC MOSFETs: Test results reveal characteristics of four major manufacturers? 900-V and 1.2-kV SiC devices

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Research on Application Characteristics of 1 200 V SiC MOSFET in Power Electronic Equipments for Smart Grid

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison between Planar-Gate and Trench-Gate Structures