Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Comparative Study on Reliability and Application Features of SiC MOSFET

Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

Comparative Investigation of Surge Current Capabilities of Si IGBT and SiC MOSFET for Pulsed Power Application

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

The Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current Tail