Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs

1.2-Kv Planar SiC MOSFETs with Improved Short-Circuit Capability by Adding Plasma Spreading Layer

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

A Novel SiC Trench MOSFET Structure with Enhanced Short Circuit Robustness

Plasma Spreading Layers: an Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

Comparative Evaluation of Short Circuit Robustness Across Generation of 1.2kv SiC MOSFETs

Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure

Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

Short Circuit Capability and Short Circuit Induced $v_{\mathrm{th}}$ Instability of a 1.2-Kv SiC Power MOSFET

Performance and Short-Circuit Reliability of SiC MOSFETs with Enhanced JFET Doping Design

Short Circuit Capability and High Temperature Channel Mobility of SiC MOSFETs