Abstract:Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) devices exhibit substantial prospects for application under extreme operational conditions, including elevated temperatures, high voltages, and high frequencies. Nevertheless, owing to their distinctive material and structural attributes, SiC MOSFET devices are not devoid of challenges, with the short-circuit phenomenon constituting a pivotal avenue of inquiry. The short-circuit effect pertains to the abrupt escalation of leakage current that these devices might undergo under elevated voltage conditions, thereby exerting a perturbing influence on their stability and reliability. Investigations into the short-circuit effect predominantly revolve around two dimensions: one involves comprehending its underlying physical mechanisms, while the other centers on identifying commensurate remedial approaches.With respect to the underlying physical mechanisms, researchers have discerned that the elevated breakdown field strength and augmented carrier mobility intrinsic to SiC materials engender an augmentation in leakage current, consequently giving rise to the short-circuit effect. Furthermore, factors such as oxide layer anomalies and surface states are also conceivable catalysts for the surge in leakage current. To rectify this predicament, scholars have proffered a panoply of stratagems, encompassing the optimization of material synthesis processes, enhancement of oxide layer quality, refinement of device structural designs, and incorporation of protective circuitry, among others. In summation, the investigation of the short-circuit effect in silicon carbide MOSFET devices is fundamentally aimed at attaining an in-depth comprehension of its causative mechanisms. Moreover, it endeavors to proffer efficacious resolutions conducive to augmenting the reliability and steadfastness of these devices within high-temperature and high-voltage environments, thereby facilitating their widespread integration within the ambit of high-performance power electronics.

Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs

Gate Failure Physics of SiC MOSFETs Under Short-Circuit Stress

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Investigation of Short-Circuit Failure Mechanisms of SiC MOSFETs by Varying DC Bus Voltage

An In-Depth Investigation into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs

Experimental and theoretical analyses of gate oxide and junction reliability for 4H-SiC MOSFET under short-circuit operation

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Experimental Investigations on Short-Circuit Capability of a New Structure Planar SiC MOSFETs

Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Analysis of Short-Circuit Behavior for SiC MOSFETs with Various Circuit Characteristics

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Multiple Failure Mode Identification of SiC Planar MOSFETs in Short-Circuit Operation

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability

Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs

Comparative Evaluation of the Short Circuit Capability of SiC Planar and Trench Power MOSFET

An investigation into the short-circuit characteristics of Sic MOSFET power devices

Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests