Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs

Ximing Chen,Hong Chen,Bangbing Shi,Yafei Wang,Xuan Li,Caineng Zhou,Chenzhan Li,Xiaochuan Deng,Haihui Luo,Yudong Wu,Bo Zhang

DOI: https://doi.org/10.1109/ted.2020.3037262

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:The short-circuit (SC) ruggedness of 3.3-kV silicon carbide (SiC) MOSFETs is of great importance for traction applications. In this article, the SC characterization and failure mechanism of 3.3-kV planar-gate SiC MOSFETs are systematically studied by experiments and simulations. The measured SC withstanding time (SCWT) of 3.3-kV SiC MOSFETs is about $17~mu text{s}$ , and the SC energy density is 15.5 J/cm². Research demonstrates that the current clamping phenomenon is attributed to the high density of interface traps ( ${D}_{text {it}}$ ) in the gate oxide of 3.3-kV SiC MOSFETs. Furthermore, the positive temperature feedback mechanism and the triggering of parasitic n-p-n transistor are proved to cause the SC failure. At last, three optimized cell structures are proposed for improving the SC capability of 3.3-kV SiC MOSFETs, where the optimal SCWT is enhanced by 23% without degrading the forward conduction capability.

engineering, electrical & electronic,physics, applied

What problem does this paper attempt to address?

The paper primarily investigates the characteristics and optimization of 3.3 kilovolt silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) under short-circuit conditions. Here are the key issues the paper attempts to address:

1. **Short-Circuit Characteristics and Failure Mechanism Study**: Through experimental and simulation methods, the short-circuit characteristics and failure mechanisms of 3.3 kV planar-gate SiC MOSFETs were systematically studied. The measured Short-Circuit Withstand Time (SCWT) is approximately 17 microseconds, and the short-circuit energy density is 15.5 joules per square centimeter.

2. **Current Clamping Phenomenon Analysis**: The study found that the current clamping phenomenon is caused by high-density interface traps (Dit) in the gate oxide layer of the 3.3 kV SiC MOSFET. In addition, the positive temperature feedback mechanism and the triggering of parasitic npn transistors have been proven to be the causes of short-circuit failure.

3. **Short-Circuit Capability Optimization**: Three improved cell structures are proposed to enhance the short-circuit capability of the 3.3 kV SiC MOSFET, with the best structure showing a 23% increase in SCWT without reducing its forward conduction ability.

The paper also discusses in detail the short-circuit test setup, the establishment of simulation models, and the comparison between experimental results and simulation outcomes, aiming to fully understand the behavior of SiC MOSFETs under short-circuit conditions and explore methods to improve their short-circuit robustness. This is particularly important for industrial fields such as traction applications, as the short-circuit capability directly affects the efficiency and safety of the system. Through in-depth research, the paper not only reveals the key factors of high-voltage SiC MOSFET short-circuit characteristics but also proposes effective optimization strategies, which are of significant importance for advancing the development of power electronic systems.