Abstract:Silicon Carbide (SiC) MOSFETs have gained significant attention in power electronics for their superior characteristics. Despite advances in 1.2kV SiC MOSFET generations, a comprehensive comparative analysis of different device types remains limited. This study examines the short-circuit (SC) behavior of 1.2kV SiC MOSFETs across multiple vendors and generations, including planar and trench structures. Key metrics such as Short Circuit Withstand Time (SCWT), SC energy, SC peak power, SC energy density, and SC current density were evaluated at DC bus voltages of 400V, 600V, and 800V. Our findings reveal that third-generation (3G) devices exhibit inferior SC performance due to smaller die areas that impede heat dissipation, with 800V survival times as low as 2.25 μs for GeneSiC-3G. In contrast, trench-based designs showed improved resilience. Infineon-1G, with an active area 44.3% smaller than Littelfuse-1G and 45% smaller than CREE-2G, achieved comparable SCWT (4.5 μs vs. 4.5 μs for Littelfuse and 4 μs for CREE-2G) while demonstrating superior thermal management, with a SC energy density of 0.096 J/mm² and current density of 41.74 A/mm² at 800V. Similarly, another trench device, Rohm-3G, outperformed planar 3G devices, with a SCWT of 3.5 μs and peak power of 110 kW at 800V. Post-SC failure mechanisms were systematically analyzed using optical microscopy, Lock-In Thermal Emission Microscopy (LITEM), and Focused Ion Beam (FIB), revealing gate leakage paths and damage in the active regions and two-finger area. These findings offer significant insights into the trade-offs between on-state performance and SC robustness, providing manufacturers and designers with crucial guidance for developing optimized SiC MOSFET designs for high-power applications.

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Methodology for Enhanced Short-Circuit Capability of SiC MOSFETs

Comprehensive Short Circuit Behavior and Failure Analysis of 1.2kv SiC MOSFETs Across Multiple Vendors and Generations

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Short-Circuit Fault Adaptive Analysis and Protection for SiC MOSFETs

Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power MOSFETs under Repetitive Short Circuit Stress

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

Investigation on Short-Circuit Characterization and Optimization of 3.3-kV SiC MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Structure Analysis on the Short-Circuit Robustness for 1200V Planar SiC MOSFETs

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Determination of Failure Degree of 1.2 Kv SiC MOSFETs after Short-Circuit Test Using an Improved Test Setup

Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Power Cycling Test Bench for Accelerated Life Testing for Reliability Assessment of SiC-MOSFET in Extreme Offshore Environment

Experimental and Numerical Demonstration and Optimized Methods for SiC Trench MOSFET Short-Circuit Capability