Abstract:Remaining useful lifetime prediction and extension of Si power devices have been studied extensively. Silicon carbide (SiC) power devices have been developed and commercialized. Specifically, SiC mosfets have been utilized for the next generation high-voltage, high-power converters with smaller size and higher efficiency, covering various mainstream applications, including photovoltaic systems, electric vehicles, solid-state transformers, and more electric ships and airplanes. However, the SiC-based devices have different failure modes and mechanisms compared with Si counterparts. Therefore, a comprehensive review is critical to develop accurate lifetime prediction and extension strategies for SiC power converter systems. The SiC power device component-level failure modes and mechanisms are first investigated. Different accelerated lifetime tests and component-level lifetime models are then compared. Power converter system-level offline lifetime modeling techniques and software tools are further summarized. Besides, the SiC power converter condition monitoring strategies and health indicators are surveyed. The online measurement challenges are also studied. Furthermore, the system-level lifetime extension strategies are reviewed. By integrating device physics, statistical modeling, reliability engineering, and mechanical engineering with power electronics, this article is intended to provide a comprehensive overview, address existing challenges, and unfold new research opportunities regarding the SiC power converter real-time lifetime prediction and extension.

Power Cycling Test Bench for Accelerated Life Testing for Reliability Assessment of SiC-MOSFET in Extreme Offshore Environment

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Comparative Study on Reliability and Application Features of SiC MOSFET

Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test

Evaluation of Long-Term Reliability and Overcurrent Capabilities of 15-kV SiC MOSFETs and 20-kV SiC IGBTs During Narrow Current Pulsed Conditions

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model

AC Power Cycling Test Setup and Condition Monitoring Tools for SiC-Based Traction Inverters

Long-term reliability of a hard-switched boost power processing unit utilizing SiC power MOSFETs

Study of Accelerated Power Cycling Test of IGBT Power Modules

Test Methodology for Short-Circuit Assessment and Safe Operation Identification for Power SiC MOSFETs

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Real-Time Extraction of SiC mosfets' Degradation Features Under Improved Accelerated Power Cycling Tests for DC-SSPC Application

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes

Degradation Assessment of 1.2-Kv SiC MOSFETs and Comparative Study with 1.2-Kv Si IGBTs under Power Cycling

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions

Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters