Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

Comparative Study on Reliability and Application Features of SiC MOSFET

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

Electrical Performances and Physics Based Analysis of 10kv SiC Power MOSFETs at High Temperatures

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

SiC MOSFET Driver and Experiment Analysis

High Current Gate Drive Circuit with High Temperature Potential for SiC MOSFET Module

Dispersion analysis of dynamic and static characteristic parameters of 1200V SiC MOSFET

A High Temperature Gate Drive Circuit for SiC MOSFET

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

Characterization, Modeling, and Application of 10-kV SiC MOSFET

Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules

Design and Application of High-Voltage SiC JFET and Its Power Modules

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications