Abstract:Silicon (Si) power devices have dominated the world of Power Electronics in the last years, and they have proven to be efficient in a wide range of applications. But high power, high frequency and high temperature applications require more than Si can deliver. Wide Band-Gap (WBG) materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) were intensively researched and developed for power applications due to the substantial advantages their inherent material properties could realize at device level. The SiC-MOSFET has unique capabilities that make it a superior switch when compared to its silicon counterparts. By nature of its material advantages, SiC MOSFETs provide lower switching loss, lower ON-resistance across its operating temperature range, and superior thermal properties. However the characteristics of SiC devices require consideration of the gate-driver circuit to optimize the switching performance. SiC-MOSFETs, due to their ultra fast switching speed, are susceptible to have harsh transients introduced by rapid change in the drain-to-source voltage. Therefore, the gate drive requirements of SiC-MOSFETs require a thorough analysis in order to prevent high dv/dt transients from causing erratic switching behavior or unnecessary switching loss. This paper provides a general review on the properties of SiC comparing some performances between Si-MOSFETs and SiC-MOSFETs for typical power electronics applications. The main constraints and issues of the SiC-MOSFET switching process are presented, and some recent proposed Gate Drivers to solve these constraints are presented throughout this work.

SiC MOSFET Driver and Experiment Analysis

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

Effectiveness Analysis of SiC MOSFET Switching Oscillation Damping

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Analysis for Crosstalk of SiC-MOSFET in a Bridge Circuit and Its Active-Clamped Driver Based Suppression Methods

Review on SiC-MOSFET devices and associated gate drivers

Comparison of Two Gate Drivers for SiC MOSFETs on Switching Performance and over Current Protection

Comparisons of SiC and Si devices for PMSM drives

Design and Performance Evaluation of a Short-circuit Protection Scheme for SiC MOSFETs

Performance of SiC Cascode Switches with Si MOS Gate

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Analysis and Suppression for Crosstalk in SiC MOSFET Turn-off Transient

Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches

Impact of Common Source Inductance on Switching Loss of SiC MOSFET

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

An Active Gate Driver for Suppressing the Current Oscillation of SiC MOSFET

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

Gate drive investigations of IGBT modules with SiC-Schottky freewheeling diodes