Optimization Method of SiC MOSFET Switching Trajectory Based on Variable Current Drive
Yeqin Lu,Yannan Yu,Changbin Huang,Jichi Yan,Haoyuan Wu
DOI: https://doi.org/10.3390/electronics13153020
IF: 2.9
2024-08-01
Electronics
Abstract:Silicon carbide (SiC) MOSFETs exhibit superior performance compared to traditional silicon (Si) MOSFETs, characterized by faster switching speeds, lower on-resistance, higher breakdown voltage, and greater operational temperature tolerance. These attributes make SiC MOSFETs highly suitable for applications in electric vehicles, charging stations, and mobile devices. However, their rapid switching speed can intensify current and voltage overshoot and oscillations during device switching, leading to increased device losses or potential damage. To address this issue, this paper proposes a current-type active gate drive (AGD) circuit. The circuit first detects the rate of change in the drain current and drain-source voltage. Subsequently, it employs an analog amplifier circuit and adjustable drive resistors to decelerate the rate of change in the drain-source voltage and drain current. As a result, overshoot and oscillation in the drain-source voltage and drain current are mitigated. Experimental results demonstrate that the proposed AGD circuit can reduce drain current overshoot by 60%, drain-source voltage overshoot by 15.38%, and waveform oscillations. Additionally, the AGD circuit decreases conduction and turn-off losses by 24% and effectively mitigates electromagnetic interference (EMI) issues within the frequency range of 0.1 to 3 MHz.
engineering, electrical & electronic,computer science, information systems,physics, applied