Simultaneous Mitigation of Switching Overvoltage and Oscillation for SiC MOSFET via Gate Charge Injection Concept
Peng Sun,Xiaofei Pan,Xudong Han,Huayang Zheng,Yuxi Liang,Yihua Hu,Fuli Niu,Zheng Zeng
DOI: https://doi.org/10.1109/tpel.2024.3435432
IF: 5.967
2024-09-13
IEEE Transactions on Power Electronics
Abstract:Due to the inherent parasitic inductance and high switching speed, the SiC mosfet generally experience significant overvoltage and oscillation, reducing the voltage margin and causing substantial electromagnetic interference. To mitigate these challenges, a novel auxiliary circuit using the gate charge injection (GCI) concept is proposed in this article. The GCI circuit, assembled across the drain-gate of the SiC mosfet, injects charges into the gate during the overvoltage stage of the turn-off process, effectively reducing overvoltage and oscillation without affecting the turn-off speed. The mechanism of the proposed GCI circuit is meticulously analyzed interval by interval based on the cell structure of the SiC mosfet, and its parameters are designed and validated through the circuit simulation. Additionally, the proposed GCI circuit, comprising Si-RC and PiN diode die, is integrated into the SiC power module and assessed by the double pulse test and power cycling test. Experimental results show a 70% reduction in the transient overvoltage at 600 V/30 A and complete the oscillation elimination, with only a 3.4% increase in the switching loss. The GCI circuit does not affect the turn-on process, making it an effective and cost-competitive solution for suppressing the overvoltage and oscillation in the SiC power module.
engineering, electrical & electronic